2024
III-N blue-emitting epi-structures with high densities of dislocations: Fundamental mechanisms for efficiency improvement and applications
Lausanne, EPFL, 2024.Identification and thermal healing of focused ion beam-induced defects in GaN using off-axis electron holography
Applied Physics Express. 2024-01-01. Vol. 17, num. 1, p. 016505. DOI : 10.35848/1882-0786/ad163d.2023
Optical and thermal characterization of a group-III nitride semiconductor membrane by microphotoluminescence spectroscopy and Raman thermometry
Physical Review B. 2023-12-29. Vol. 108, num. 23, p. 235313. DOI : 10.1103/PhysRevB.108.235313.Dynamical nuclear polarization for dissipation-induced entanglement in NV centers
Physical Review B. 2023-11-13. Vol. 108, num. 17, p. 174418. DOI : 10.1103/PhysRevB.108.174418.Optically detected magnetic resonance with an open source platform
Scipost Physics Core. 2023-10-01. Vol. 6, num. 4, p. 065. DOI : 10.21468/SciPostPhysCore.6.4.065.Investigation of the Impact of Point Defects in InGaN/GaN Quantum Wells with High Dislocation Densities
Nanomaterials. 2023-09-01. Vol. 13, num. 18, p. 2569. DOI : 10.3390/nano13182569.Optimizing Data Processing for Nanodiamond Based Relaxometry
Advanced Quantum Technologies. 2023-07-05. p. 2300109. DOI : 10.1002/qute.202300109.Fast, Broad-Band Magnetic Resonance Spectroscopy with Diamond Widefield Relaxometry
Acs Sensors. 2023-04-12. DOI : 10.1021/acssensors.2c02809.Polariton lasing in AlGaN microring with GaN/AlGaN quantum wells
Apl Photonics. 2023-02-01. Vol. 8, num. 2, p. 021302. DOI : 10.1063/5.0132170.Detecting the metabolism of individual yeast mutant strain cells when aged, stressed or treated with antioxidants with diamond magnetometry
Nano Today. 2023-02-01. Vol. 48, p. 101704. DOI : 10.1016/j.nantod.2022.101704.The nanoscale impact of individual nonradiative point defects on InGaN/GaN quantum wells
Lausanne, EPFL, 2023.2022
Modeling the electrical characteristic of InGaN/GaN blue-violet LED structure under electrical stress
Microelectronics Reliability. 2022-11-01. Vol. 138, p. 114724. DOI : 10.1016/j.microrel.2022.114724.Diamond-Based Nanoscale Quantum Relaxometry for Sensing Free Radical Production in Cells
Small. 2022-09-28. DOI : 10.1002/smll.202105750.Single-Particle Tracking and Trajectory Analysis of Fluorescent Nanodiamonds in Cell-Free Environment and Live Cells
Small. 2022-08-29. p. 2201395. DOI : 10.1002/smll.202201395.Single photon emission and recombination dynamics in self-assembled GaN/AlN quantum dots
Light-Science & Applications. 2022-04-28. Vol. 11, num. 1, p. 114. DOI : 10.1038/s41377-022-00799-4.Defects in III-N LEDs: experimental identification and impact on electro-optical characteristics
2022-01-01. Conference on Light-Emitting Devices, Materials, and Applications XXVI at SPIE Photonics WEST OPTO Conference, ELECTR NETWORK, Jan 22-Feb 28, 2022. p. 120220G. DOI : 10.1117/12.2606599.Deep defects in InGaN LEDs: modeling the impact on the electrical characteristics
2022-01-01. Conference on Gallium Nitride Materials and Devices XVII at SPIE OPTO Conference, ELECTR NETWORK, Jan 22-Feb 28, 2022. p. 1200105. DOI : 10.1117/12.2606560.Quantum Sensing of Free Radicals in Primary Human Dendritic Cells
Nano Letters. 2022. Vol. 22, num. 4, p. 1818–1825. DOI : 10.1021/acs.nanolett.1c03021.2021
Effects of quantum-well indium content on deep defects and reliability of InGaN/GaN light-emitting diodes with under layer
Journal Of Physics D-Applied Physics. 2021-12-16. Vol. 54, num. 50, p. 505108. DOI : 10.1088/1361-6463/ac2693.Modeling the electrical characteristics of InGaN/GaN LED structures based on experimentally-measured defect characteristics
Journal Of Physics D-Applied Physics. 2021-10-21. Vol. 54, num. 42, p. 425105. DOI : 10.1088/1361-6463/ac16fd.Imaging Nonradiative Point Defects Buried in Quantum Wells Using Cathodoluminescence
Nano Letters. 2021-06-23. Vol. 21, num. 12, p. 5217-5224. DOI : 10.1021/acs.nanolett.1c01295.Ultrafast-nonlinear ultraviolet pulse modulation in an AlInGaN polariton waveguide operating up to room temperature
Nature Communications. 2021-06-09. Vol. 12, num. 1, p. 3504. DOI : 10.1038/s41467-021-23635-6.Quantum monitoring of cellular metabolic activities in single mitochondria
Science Advances. 2021-05-01. Vol. 7, num. 21, p. eabf0573. DOI : 10.1126/sciadv.abf0573.High conductivity InAlN/GaN multi-channel two-dimensional electron gases
Semiconductor Science And Technology. 2021-05-01. Vol. 36, num. 5, p. 055020. DOI : 10.1088/1361-6641/abf3a7.Evidence of the entanglement constraint on wave-particle duality using the IBM Q quantum computer
Physical Review A. 2021-02-09. Vol. 103, num. 2, p. 022409. DOI : 10.1103/PhysRevA.103.022409.Smooth GaN membranes by polarization-assisted electrochemical etching
Applied Physics Letters. 2021-02-08. Vol. 118, num. 6, p. 062107. DOI : 10.1063/5.0034898.Dark-level trapping, lateral confinement, and built-in electric field contributions to the carrier dynamics in c-plane GaN/AlN quantum dots emitting in the UV range
Journal Of Applied Physics. 2021-02-07. Vol. 129, num. 5, p. 054301. DOI : 10.1063/5.0038733.Defect incorporation in In-containing layers and quantum wells: experimental analysis via deep level profiling and optical spectroscopy
Journal Of Physics D-Applied Physics. 2021-01-14. Vol. 54, num. 2, p. 025108. DOI : 10.1088/1361-6463/abb727.Interaction of Confined Polaritons in Microcavity Structures
Lausanne, EPFL, 2021.2020
Nanodiamond Relaxometry-Based Detection of Free-Radical Species When Produced in Chemical Reactions in Biologically Relevant Conditions
Acs Sensors. 2020-12-24. Vol. 5, num. 12, p. 3862-3869. DOI : 10.1021/acssensors.0c01037.Interplay of anomalous strain relaxation and minimization of polarization changes at nitride semiconductor heterointerfaces
Physical Review B. 2020-12-21. Vol. 102, num. 24, p. 245304. DOI : 10.1103/PhysRevB.102.245304.Deep traps in InGaN/GaN single quantum well structures grown with and without InGaN underlayers
Journal Of Alloys And Compounds. 2020-12-10. Vol. 845, p. 156269. DOI : 10.1016/j.jallcom.2020.156269.Interplay of intrinsic and extrinsic states in pinning and passivation of m-plane facets of GaN n-p-n junctions
Journal Of Applied Physics. 2020-11-14. Vol. 128, num. 18, p. 185701. DOI : 10.1063/5.0020652.Effects of 5 MeV electron irradiation on deep traps and electroluminescence from near-UV InGaN/GaN single quantum well light-emitting diodes with and without InAlN superlattice underlayer
Journal Of Physics D-Applied Physics. 2020-10-28. Vol. 53, num. 44, p. 445111. DOI : 10.1088/1361-6463/aba6b7.Polariton relaxation and polariton nonlinearities in nonresonantly cw-pumped III-nitride slab waveguides
Physical Review B. 2020-10-19. Vol. 102, num. 15, p. 155304. DOI : 10.1103/PhysRevB.102.155304.Combined synchrotron x-ray diffraction and NV diamond magnetic microscopy measurements at high pressure
New Journal Of Physics. 2020-10-01. Vol. 22, num. 10, p. 103063. DOI : 10.1088/1367-2630/abc28f.Doubly resonant second-harmonic generation of a vortex beam from a bound state in the continuum
Optica. 2020-09-03. Vol. 7, num. 9, p. 1126. DOI : 10.1364/OPTICA.396408.Localized Photon Lasing in a Polaritonic Lattice Landscape
Physical Review Applied. 2020-08-19. Vol. 14, num. 2, p. 024055. DOI : 10.1103/PhysRevApplied.14.024055.Toward Bright and Pure Single Photon Emitters at 300 K Based on GaN Quantum Dots on Silicon
Acs Photonics. 2020-06-17. Vol. 7, num. 6, p. 1515-1522. DOI : 10.1021/acsphotonics.0c00310.Impact of defects on Auger recombination in c-plane InGaN/GaN single quantum well in the efficiency droop regime
Applied Physics Letters. 2020-06-01. Vol. 116, num. 22, p. 222106. DOI : 10.1063/5.0004321.Dimensioning a full color LED microdisplay for augmented reality headset in a very bright environment
Journal Of The Society For Information Display. 2020-04-01. Vol. 29, num. 1, p. 3-16. DOI : 10.1002/jsid.884.III-nitride photonic cavities
Nanophotonics. 2020-03-01. Vol. 9, num. 3, p. 569-598. DOI : 10.1515/nanoph-2019-0442.Efficient second harmonic generation in a doubly resonant photonic crystal cavity based on a bound state in the continuum
2020-01-01. IEEE Photonics Conference (IPC), ELECTR NETWORK, Sep 28-Oct 01, 2020. DOI : 10.1109/IPC47351.2020.9252325.2019
Anderson localisation in steady states of microcavity polaritons
Scientific Reports. 2019-12-18. Vol. 9, p. 19396. DOI : 10.1038/s41598-019-55673-y.Broadened Bandwidth Amplified Spontaneous Emission from Blue GaN-Based Short-Cavity Superluminescent Light-Emitting Diodes
Ecs Journal Of Solid State Science And Technology. 2019-12-16. Vol. 9, num. 1, p. 015019. DOI : 10.1149/2.0432001JSS.Impact of alloy disorder on Auger recombination in single InGaN/GaN core-shell microrods
Physical Review B. 2019-12-04. Vol. 100, num. 23, p. 235301. DOI : 10.1103/PhysRevB.100.235301.Effects of InAlN underlayer on deep traps detected in near-UV InGaN/GaN single quantum well light-emitting diodes
Journal Of Applied Physics. 2019-09-28. Vol. 126, num. 12, p. 125708. DOI : 10.1063/1.5122314.Probing Alloy Formation Using Different Excitonic Species: The Particular Case of InGaN
Physical Review X. 2019-08-21. Vol. 9, num. 3, p. 031030. DOI : 10.1103/PhysRevX.9.031030.Short cavity InGaN-based laser diodes with cavity length below 300 mu m
Semiconductor Science And Technology. 2019-08-01. Vol. 34, num. 8, p. 085005. DOI : 10.1088/1361-6641/ab2c2f.Efficient Quantum Algorithms for GHZ and W States, and Implementation on the IBM Quantum Computer
Advanced Quantum Technologies. 2019-06-01. Vol. 2, num. 5-6, p. 1900015. DOI : 10.1002/qute.201900015.InAlN underlaver for near ultraviolet InGaN based light emitting diodes
Applied Physics Express. 2019-03-01. Vol. 12, num. 3, p. 034002. DOI : 10.7567/1882-0786/ab0147.Density control of GaN quantum dots on AlN single crystal
Applied Physics Letters. 2019-02-25. Vol. 114, num. 8, p. 082101. DOI : 10.1063/1.5083018.Electroluminescence of Single InGaN/GaN Micropyramids
Optics And Spectroscopy. 2019-02-01. Vol. 126, num. 2, p. 118-123. DOI : 10.1134/S0030400X19020036.Polaritonic Cross Feshbach Resonance
Physical Review Letters. 2019-01-31. Vol. 122, num. 4, p. 047402. DOI : 10.1103/PhysRevLett.122.047402.Room temperature single photon emission from planar GaN/AlN quantum dot samples grown by MBE
2019-01-01. Compound Semiconductor Week (CSW) Conference, Nara, JAPAN, May 19-23, 2019. DOI : 10.1109/ICIPRM.2019.8819364.Probing alloy formation using different excitonic species: The particular case of InGaN
2019-01-01. Compound Semiconductor Week (CSW) Conference, Nara, JAPAN, May 19-23, 2019. DOI : 10.1109/ICIPRM.2019.8819178.Gas pressure measurement device
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2019.Elucidating the role of the InGaN UL in the efficiency of InGaN based light-emitting diodes
Lausanne, EPFL, 2019.Ultrafast carrier dynamics in III-nitride nanostructures and LED quantum efficiency
Lausanne, EPFL, 2019.Impact of Strain and Alloy Disorder on the Electronic Properties of III-Nitride Based Two-dimensional Electron Gases
Lausanne, EPFL, 2019.GaN Quantum Dots for Room Temperature Excitonic Physics
Lausanne, EPFL, 2019.Low-temperature growth of n(++)-GaN by metalorganic chemical vapor deposition to achieve low-resistivity tunnel junctions on blue light emitting diodes
Semiconductor Science And Technology. 2019-01-01. Vol. 34, num. 1, p. 015002. DOI : 10.1088/1361-6641/aaed6e.2018
GaN surface as the source of non-radiative defects in InGaN/GaN quantum wells
Applied Physics Letters. 2018-09-10. Vol. 113, num. 11, p. 111106. DOI : 10.1063/1.5048010.Insights about the Absence of Rb Cation from the 3D Perovskite Lattice: Effect on the Structural, Morphological, and Photophysical Properties and Photovoltaic Performance
Small. 2018-09-06. Vol. 14, num. 36, p. 1802033. DOI : 10.1002/smll.201802033.Optical absorption edge broadening in thick InGaN layers: Random alloy atomic disorder and growth mode induced fluctuations
Applied Physics Letters. 2018. Vol. 112, num. 3, p. 032106. DOI : 10.1063/1.5010879.Optical absorption and oxygen passivation of surface states in III-nitride photonic devices
Journal of Applied Physics. 2018. Vol. 123, num. 11, p. 113103. DOI : 10.1063/1.5022150.Impact of surface morphology on the properties of light emission in InGaN epilayers
APPLIED PHYSICS EXPRESS. 2018. Vol. 11, num. 5, p. 051004. DOI : 10.7567/APEX.11.051004.Excited states of neutral donor bound excitons in GaN
Journal of Applied Physics. 2018. Vol. 123, num. 21, p. 215702. DOI : 10.1063/1.5028370.Composition Metrology of Ternary Semiconductor Alloys Analyzed by Atom Probe Tomography
JOURNAL OF PHYSICAL CHEMISTRY C. 2018. Vol. 122, num. 29, p. 16704-16714. DOI : 10.1021/acs.jpcc.8b03223.Alloy disorder limited mobility of InGaN two-dimensional electron gas
Applied Physics Letters. 2018. Vol. 112, num. 26, p. 262101. DOI : 10.1063/1.5030992.A quantum optical study of thresholdless lasing features in high-beta nitride nanobeam cavities
Nature Communications. 2018. Vol. 9, p. 564. DOI : 10.1038/s41467-018-02999-2.Light-Matter Interaction in III-Nitride Waveguides: Propagating Polaritons and Optical Gain
Lausanne, EPFL, 2018.III-Nitride Semiconductor Photonic Nanocavities on Silicon
Lausanne, EPFL, 2018.Impact of Mode-Hopping Noise on InGaN Edge Emitting Laser Relative Intensity Noise Properties
IEEE Journal of Quantum Electronics. 2018. Vol. 54, num. 1, p. 1100107. DOI : 10.1109/Jqe.2017.2774358.2017
Burying non-radiative defects in InGaN underlayer to increase InGaN/GaN quantum well efficiency
Applied Physics Letters. 2017. Vol. 111, num. 26, p. 262101. DOI : 10.1063/1.5007616.AlN grown on Si(111) by ammonia-molecular beam epitaxy in the 900-1200 degrees C temperature range
Journal Of Crystal Growth. 2017. Vol. 476, p. 58-63. DOI : 10.1016/j.jcrysgro.2017.08.006.Multilayer porous structures on GaN for the fabrication of Bragg reflectors
2017. Conference on Nanotechnology VIII, Barcelona, SPAIN, MAY 08-09, 2017. p. 102480R. DOI : 10.1117/12.2266280.Critical thickness of GaN on AlN: impact of growth temperature and dislocation density
Semiconductor Science And Technology. 2017. Vol. 32, num. 7, p. 075010. DOI : 10.1088/1361-6641/aa7248.Determining the nature of excitonic dephasing in high-quality GaN/AlGaN quantum wells through time-resolved and spectrally resolved four-wave mixing spectroscopy
Physical Review B. 2017. Vol. 96, num. 4, p. 041303. DOI : 10.1103/PhysRevB.96.041303.Method for labeling products with a transparent photoluminescent label, and transparent photoluminescent label
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